
IDT5V41064
1 OUTPUT PCIE GEN1/2 SYNTHESIZER
IDT 1 OUTPUT PCIE GEN1/2 SYNTHESIZER
8
IDT5V41064
REV G 112111
AC Electrical Characteristics - CLK/CLK
Unless stated otherwise, VDD=3.3 V ±5%, Ambient Temperature -40 to +85
° C
1 Test setup is R
S=33 ohms RP=50 ohms with 2 pF, RR = 475Ω (1%).
2 Measurement taken from a single-ended waveform.
3 Measurement taken from a differential waveform.
4 Measured at the crossing point where instantaneous voltages of both CLK and CLK are equal.
Electrical Characteristics - Differential Phase Jitter
Note 1. Guaranteed by design and characterization, not 100% tested in production.
Note 2. See http://www.pcisig.com for complete specs.
Note 3: Applies to 100MHz, spread off and 0.5% down spread only.
Thermal Characteristics
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Units
Input Frequency
25
MHz
Output Frequency
100
MHz
Output High Voltage1,2
VOH
660
700
850
mV
Output Low Voltage1,2
VOL
-150
0
27
mV
Crossing Point Voltage1,2
Absolute
250
350
550
mV
Crossing Point Voltage1,2,4
Variation over all edges
40
140
mV
Jitter, Cycle-to-Cycle1,3
25
100
ps
Rise Time1,2
tOR
From 0.175 V to 0.525 V
175
332
700
ps
Fall Time1,2
tOF
From 0.525 V to 0.175 V
175
344
700
ps
Rise/Fall Time Variation1,2
75
125
ps
Duty Cycle1,3
45
51
55
%
Stabilization Time
tSTABLE
From power-up VDD=3.3 V
1.2
3.0
ms
Spread Change Time
tSPREAD
Settling period after spread change
3.0
ms
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Notes
Jitter, Phase
tjphasePLL
PCIe Gen1
30
86
ps (p-p)
1,2,3
tjphaseLO
PCIe Gen2, 10 kHz < f < 1.5 MHz
1.2
3
ps (RMS)
1,2,3
tjphaseHIGH PCIe Gen2, 1.5 MHz < f < Nyquist (50 MHz)
1.9
3.1
ps (RMS)
1,2,3
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Units
Thermal Resistance Junction to
Ambient
θJA
Still air
63.2
° C/W
θJA
1 m/s air flow
55.9
° C/W
θJA
2 m/s air flow
53.1
° C/W
θJA
3 m/s air flow
51.4
° C/W
Thermal Resistance Junction to Case
θJC
65.8
° C/W